ULN2002A 数据手册
其他文档
ULN200x(A,D1) 17 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistor Arrays
- Datasheet: STMicroelectronics ULN2002A
- Input current (Ii@Vi): 0.82mA@17V
- Operating Temperature: -40°C~+85°C
- Input Capacitance (Ci): 15pF
- Output leakage current (Icex@Vce): 50uA@50V
- Clamp Diode Forward Voltage (VF@IF): 1.7V@350mA
- Clamp Diode Leakage Current (IR@VR): 50uA@50V
- ON-state input voltage(VI(on)@Vce,Ic): 13V@2V,300mA
- Off-state input current (Ii(off)@Vce,Ic): 65uA@500uA
- Collector-emitter saturation voltage (VCE(sat)@Ii,Ic): 1.3V@500uA,350mA
- Package: DIP-16
- Manufacturer: STMicroelectronics
- Series: -
- Packaging: Tube
- Part Status: Active
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
- Base Part Number: ULN2002
- detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP