دیتاشیت ULN2002A
مشخصات دیتاشیت
| نام دیتاشیت |
ULN2002A
|
| حجم فایل |
75.636
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
21
|
مشخصات فنی
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistor Arrays
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Datasheet:
STMicroelectronics ULN2002A
-
Input current (Ii@Vi):
0.82mA@17V
-
Operating Temperature:
-40°C~+85°C
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Input Capacitance (Ci):
15pF
-
Output leakage current (Icex@Vce):
50uA@50V
-
Clamp Diode Forward Voltage (VF@IF):
1.7V@350mA
-
Clamp Diode Leakage Current (IR@VR):
50uA@50V
-
ON-state input voltage(VI(on)@Vce,Ic):
13V@2V,300mA
-
Off-state input current (Ii(off)@Vce,Ic):
65uA@500uA
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Collector-emitter saturation voltage (VCE(sat)@Ii,Ic):
1.3V@500uA,350mA
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Package:
DIP-16
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Manufacturer:
STMicroelectronics
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Series:
-
-
Packaging:
Tube
-
Part Status:
Active
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Transistor Type:
7 NPN Darlington
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
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Current - Collector Cutoff (Max):
50µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
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Power - Max:
-
-
Frequency - Transition:
-
-
Mounting Type:
Through Hole
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Package / Case:
16-DIP (0.300", 7.62mm)
-
Supplier Device Package:
16-DIP
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Base Part Number:
ULN2002
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detail:
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
